參數(shù)資料
型號(hào)： KM616FR1010
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
中文描述： 64K的× 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（64K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 116K
代理商： KM616FR1010
Revision 1.0
February 1998
CMOS SRAM
KM616FS1010, KM616FR1010 Family
2
64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology : Full CMOS
Organization : 64K x16bit
Power Supply Voltage
KM616FS1010 Family : 2.3V ~ 3.3V
KM616FR1010 Family : 1.8V ~ 2.7V
Low Data Retention Voltage : 1.5V(Min)
Three state output status and TTL Compatible
Package Type : 44-TSOP2-400F
PRODUCT FAMILY
GENERAL DESCRIPTION
The KM616FS1010 and KM616FR1010 families are fabricated
by SAMSUNG
′
s advanced Full CMOS process technology. The
families support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also support low data retention voltage for battery back-
up operation with low data retention current.
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
15
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
N.C.
No Connection
1. The parameter is measured with 30pF test load.
2. Super low power product=1
μ
A with special handling.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
80mA
KM616FS1010
Commercial(0~70
°
C)
2.3~3.3V
70
1)
/85@V
CC
=3.0
±
0.3V
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
70
1)
/85@V
CC
=3.0
±
0.3V
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
5
μ
A
2)
44-TSOP2
Forward
50mA
KM616FR1010
1.8~2.7V
20mA
KM616FS1010I
Industrial(-40~85
°
C)
2.3~3.3V
80mA
50mA
KM616FR1010I
1.8~2.7V
20mA
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
64
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A10
A13
A12
A11 A9 A8
A7
A6
A5
A4
A3
A2
A1
A0
WE
OE
UB
CS
I/O
1
~I/O
8
A15
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
A14
Control
logic
相關(guān)PDF資料
PDF描述
KM616FS1010 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FR4010 256K x 16 Bit Low Power and Low Voltage Full CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS1000Z 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FR1000Z 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS1010Z 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
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