參數(shù)資料
型號： KM616FR2000Z
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
中文描述： 128K的× 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 4/9頁
文件大?。?/td> 162K
代理商： KM616FR2000Z
Revision 0.2
August 1998
CMOS SRAM
KM616FS2000Z, KM616FR2000Z Family
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Symbol
1. T
A
=-40 to 85
°
C, unless otherwise specified
2. Overshoot : Vcc + 1.0V in case of pulse width
≤
20ns
3. Undershoot : -1.0V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Product
Min
Typ
2)
2.5/3.0
Max
Unit
Supply voltage
Vcc
KM616FS2000Z Family
2.3
3.3
V
KM616FR2000Z Family
1.8
2.0/2.5
2.7
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
KM616FS2000Z Family
Vcc=3.0
±
0.2V
Vcc=2.5
±
0.2V
Vcc=2.5
±
0.2V
Vcc=2.0
±
0.2V
2.2
-
Vcc+0.2
2)
Vcc+0.2
2)
Vcc+0.2
2)
Vcc+0.2
2)
0.4
V
2.0
-
V
KM616FR2000Z Family
2.0
-
V
1.6
-
V
Input low voltage
V
IL
All Family
-0.2
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
Item
1. Capacitance is sampled not, 100% tested
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
1. Super low power product=2
μ
A with special handling.
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
10
mA
-
-
25
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA,
CS
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
Read
-
-
10
mA
Write
-
-
25
I
CC2
Cycle time=Min, 100% duty,
I
IO
=0mA, CS=V
IL
,
V
IN
=V
IL
or V
IH
Vcc=3.3V@100ns
-
-
80
mA
Vcc=2.7V@150ns
-
-
50
Vcc=2.2V@300ns
-
-
25
Output low voltage
V
OL
I
OL
2.1mA at Vcc=3.0V
-
-
0.4
V
0.5mA at Vcc=2.5V
-
-
0.4
0.33mA at Vcc=2.0V
-
-
0.4
Output high voltage
V
OH
I
OH
-1.0mA at Vcc=3.0V
2.4
-
-
V
-0.5mA at Vcc=2.5V
2.0
-
-
-0.44mA at Vcc=2.0V
1.6
-
-
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IL
or V
IH
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
-
0.1
10
1)
μ
A
相關(guān)PDF資料
PDF描述
KM616FS2000 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FR2000 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FV2000 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS2010A 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS4010 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
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