參數(shù)資料
型號(hào)： KM616FS2000
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
中文描述： 128K的x16位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 2/9頁
文件大?。?/td> 122K
代理商： KM616FS2000
CMOS SRAM
KM616FV2000, KM616FS2000, KM616FR2000 Family
Revision 1.0
March 1998
2
128Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology : Full CMOS
Organization : 128Kx16
Power Supply Voltage
KM616FV2000 Family : 3.0V ~ 3.6V
KM616FS2000 Family : 2.3V ~ 3.3V
KM616FR2000 Family : 1.8V ~ 2.7V
Low Data Retention Voltage : 1.5V(Min)
Three state output status and TTL Compatible
Package Type : 44-TSOP2-400F
GENERAL DESCRIPTION
The KM616FV2000, KM616FS2000 and KM616FR2000
families are fabricated by SAMSUNG
′
s advanced Full
CMOS process technology. The families support various
operating temperature ranges for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
LB
Lower Byte(I/O
1
~
8
)
OE
Output Enable Input
UB
Upper Byte(I/O
9
~
16
)
WE
Write Enable Input
Vcc
Power
A
0
~A
16
Address Inputs
Vss
Ground
I/O
1
~I/O
16
Data Inputs/Outputs
N.C.
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Super low power product=2
μ
A with special handling.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
80mA
KM616FV2000
Commercial(0~70
°
C)
3.0~3.6V
70
1)
/85@V
CC
=3.3
±
0.3V
85@V
CC
=3.0
±
0.3V
10
μ
A
2)
44-TSOP2-
Forward
KM616FS2000
2.3~3.3V
80mA
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
70
1)
/85@V
CC
=3.3
±
0.3V
85@V
CC
=3.0
±
0.3V
50mA
KM616FR2000
1.8~2.7V
20mA
KM616FV2000I
Industrial(-40~85
°
C)
3.0~3.6V
80mA
KM616FS2000I
2.3~3.3V
80mA
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
50mA
KM616FR2000I
1.8~2.7V
20mA
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9
A8
A5
A6 A7 A11 A10
A4
A3
A2
A1
A0
A16
A14
A15
I/O
1
~I/O
8
A12
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A13
WE
OE
UB
CS
LB
Control
logic
相關(guān)PDF資料
PDF描述
KM616FR2000 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FV2000 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS2010A 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FS4010 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
KM616FU2010A 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM6-16S-10PN 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk
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KM6-16S-10SN-MK2 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk
KM6-16S-10SY 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk
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