參數(shù)資料
型號(hào): KM616U1000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述: 64K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM(64K的× 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 135K
代理商: KM616U1000B
KM616V1000B, KM616U1000B Family
CMOS SRAM
Revision 2.0
February 1998
1
Document Title
64K x16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
0.1
1.0
2.0
2.01
Remark
Advance
Preliminary
Final
Final
History
Design target
Initial draft
Finalize
- One datasheet for commercial and industrial part and 3.0, 3.3V prod-
uct.
Revised
- Change datasheet format.
- Remove Icc write current value.
- Remove low power product from TSOP package
- Remove 100ns part from KM616V1000B Family
- Remove Extended product
Errata correction
Draft Data
July 24, 1995
August 12, 1995
April 13, 1996
February 25, 1998
August 13, 1998
相關(guān)PDF資料
PDF描述
KM616V1000B 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U2000 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
KM616U4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
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