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參數(shù)資料
| 型號： | KM616V4000BZ |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 151K |
| 代理商： | KM616V4000BZ |
Revision 0.11
February 1998
CMOS SRAM
KM616V4000BZ, KM616U4000BZ Family
Preliminary
2
256Kx16 Low Power and Low Voltage CMOS Static RAM
with 48-CSP(Chip Scale Package)
GENERAL DESCRIPTION
The KM616V4000BZ and KM616U4000BZ families are fab-
ricated by SAMSUNG
′
s advanced CMOS process technology.
The families support industrial operating temperature ranges
and have very small size with 0.75 ball pitch and 6x8 ball
array. The families also supports low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology : CMOS
Organization :256Kx16
Power Supply Voltage
KM616V4000BZ Family : 3.0 ~ 3.6V
KM616U4000BZ Family : 2.7 ~ 3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 48-CSP with 0.75 pitch
48-CSP PIN TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM616V4000BLZI-L
Industrial (-40~85
°
C)
3.0~3.6V
85
20
μ
A
60mA
48-CSP(6x8 ball area
with 0.75mm ball pitch)
KM616U4000BLZI-L
2.7~3.3V
100
LB
OE
A0
A1
A2
N.C
I/O9
UB
A3
A4
CS
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
N.C
A12
A13
WE
I/O8
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
Name
Function
Name
Function
CS
Chip Select Input
LB
Lower Byte (I/O
1~8
)
OE
Output Enable Input
UB
Upper Byte(I/O
9~16
)
WE
Write Enable Input
Vcc
Power
A
0
~A
17
Address Inputs
Vss
Ground
I/O
1
~I/O
16
Data Inputs/Outputs
N.C
No Connection
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Clk gen.
Row
select
A10 A11A12A13A14
A16
A15
A0
A1
A2
A3
A4
A5
A6
A7
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A9
A17
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
WE
OE
UB
CS
LB
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616U4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U4000C | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000C | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U4010C | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
| KM616V4002BT-15 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP 制造商:Seco Electronic Device 功能描述:Static RAM, 256Kx16, 44 Pin, Plastic, TSOP |
| KM6-19-20PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-FO | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-19-20PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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