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參數(shù)資料
| 型號： | KM62U256CLG-8L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗和低成本嚇的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | KM62U256CLG-8L |
ELECTRONICS
KM62V256C, KM62U256C Family
CMOS SRAM
Revision 04
April 1996
-
12
-
3) Idr(Data Retention Current) characteristics by temperature variation
All the values in this graph are depicted by the relative value with the maximum value
measured at Vdr=3.0V and 85
° C
temperature. The basic relative value of Idr at that
condition is set into 1.
Idr v.s Temperature @ Vcc=3.0V
0.00
0.20
0.40
0.60
0.80
1.00
-40
-10
0
25
40
70
85
Temperature(
é
)
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM62U256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62V256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62U256D | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62V256D | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM641001A | 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM62U256CLRG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLRG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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