參數(shù)資料
型號(hào): KM62V256C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM)
中文描述: 32K的× 8位低功耗CMOS靜態(tài)RAM(32K的× 8位低功耗的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 129K
代理商: KM62V256C
KM62V256C, KM62U256C Family
CMOS SRAM
Revision 4.0
February 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Commercial Product : T
A
=0 to 70
°
C, otherwise specified
Extended Product : T
A
=-25 to 85
°
C, unless otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
30ns
3. Undershoot : -3.0V in case of pulse width
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM62V256C Family
KM62U256C Family
3.0
2.7
3.3
3.0
3.6
3.3
V
Ground
Vss
All
0
0
0
V
Input high voltage
V
IH
KM62V256C, KM62U256C Family
2.2
-
Vcc+0.3V
2)
0.4
V
Input low voltage
V
IL
KM62V256C, KM62U256C Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
6
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
-1
-
1
Operating power supply
I
CC
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
1.0
2.0
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS
0.2V, V
IN
0.2V, V
IN
Vcc -0.2V
-
2.5
5
mA
I
CC2
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
-
20
35
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.2
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs=V
IH
or V
IL
-
-
0.3
mA
Standby Current(CMOS)
I
SB1
CS
Vcc-0.2V, Other inputs=0~Vcc
KM62V256CL-L
KM62V256CLE-L
KM62V256CLI-L
-
-
-
1.5
1.5
1.5
10
20
20
μ
A
KM62U256CL-L
KM62U256CLE-L
KM62U256CLI-L
-
-
-
1.0
1.0
1.0
10
15
15
μ
A
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