- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373161 > KM68257EI (SAMSUNG SEMICONDUCTOR CO. LTD.) 32K x 8 Bit High-Speed CMOS Static RAM(32K x8位高速CMOS 靜態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號： | KM68257EI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32K x 8 Bit High-Speed CMOS Static RAM(32K x8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 32K的× 8位高速CMOS靜態(tài)RAM（32K的x8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | KM68257EI |
KM68257E, KM68257EI
CMOS SRAM
PRELIMINARY
Revision 0.0
August 1998
- 3 -
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70
°
C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* V
IL
(Min) = -2.0(Pulse Width
≤
7ns) for I
≤
20mA
**
V
IH
(Max) = V
CC
+2.0V(Pulse Width
≤
7ns) for I
≤
20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5**
V
Input Low Voltage
V
IL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70
°
C,V
CC
=5.0V
±
10% unless otherwise specified)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* V
CC
=5.0V, Temp.=25
°
C
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
= V
SS
to
V
CC
-1
1
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
= V
SS
to
V
CC
-1
1
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
= V
IH
or
V
IL,
I
OUT
=0mA
10ns
-
80
mA
12ns
-
80
15ns
-
80
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
20
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or
V
IN
≤
0.2V
-
2
mA
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1*
I
OH1
=0.1mA
-
3.95
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* NOTE : Capacitance is sampled and not 100% tested.
Item
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
7
pF
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 7.0
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
W
°
C
°
C
°
C
Power Dissipation
P
D
1.0
Storage Temperature
T
STG
-65 to 150
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
相關PDF資料 |
PDF描述 |
|---|---|
| KM684000A | 512Kx8 bit Low Power CMOS Static RAM(512K x 8位低功耗CMOS 靜態(tài) RAM) |
| KM684000B | 512Kx8 bit Low Power CMOS Static RAM(512K x 8位低功耗CMOS 靜態(tài) RAM) |
| KM684000LR-5 | RES 51K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA |
| KM684000LR-5L | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
| KM684000LR-7 | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM68257EI-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| KM68257EI-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| KM68257EI-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| KM682J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
| KM683J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
發(fā)布緊急采購，3分鐘左右您將得到回復。