參數(shù)資料
型號: KM684000A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx8 bit Low Power CMOS Static RAM(512K x 8位低功耗CMOS 靜態(tài) RAM)
中文描述: 512Kx8位低功耗CMOS靜態(tài)RAM(為512k × 8位低功耗的CMOS靜態(tài)RAM)的
文件頁數(shù): 6/9頁
文件大?。?/td> 158K
代理商: KM684000A
KM684000A Family
CMOS SRAM
Revision 2.0
February 1998
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
Address
OE
Data ou
t
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ
t
RC
t
OE
t
CO
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