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參數(shù)資料
| 型號： | KM684000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM(512K x 8位低功耗CMOS 靜態(tài) RAM) |
| 中文描述： | 512Kx8位低功耗CMOS靜態(tài)RAM（為512k × 8位低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 159K |
| 代理商： | KM684000B |
KM684000B Family
CMOS SRAM
Revision 2.0
February 1998
5
AC CHARACTERISTICS
(Vcc=4.5~5.5V, KM684000B Family:T
A
=0 to 70
°
C, KM684000BI Family:T
A
=-40 to 85
°
C)
Parameter List
Symbol
Speed Bins
Units
55*ns
70ns
100ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
t
RC
55
-
70
-
100
-
ns
Address access time
t
AA
-
55
-
70
-
100
ns
Chip select to output
t
CO
-
55
-
70
-
100
ns
Output enable to valid output
t
OE
-
25
-
35
-
50
ns
Chip select to low-Z output
t
LZ
10
-
10
-
10
-
ns
Output enable to low-Z output
t
OLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
t
HZ
0
20
0
25
0
30
ns
Output disable to high-Z output
t
OHZ
0
20
0
25
0
30
ns
Output hold from address change
t
OH
10
-
10
-
10
-
ns
Write
Write cycle time
t
WC
55
-
70
-
100
-
ns
Chip select to end of write
t
CW
45
-
60
-
80
-
ns
Address set-up time
t
AS
0
-
0
-
0
-
ns
Address valid to end of write
t
AW
45
-
60
-
80
-
ns
Write pulse width
t
WP
40
-
50
-
60
-
ns
Write recovery time
t
WR
0
-
0
-
0
-
ns
Write to output high-Z
t
WHZ
0
20
0
25
0
30
ns
Data to write time overlap
t
DW
25
-
30
-
40
-
ns
Data hold from write time
t
DH
0
-
0
-
0
-
ns
End write to output low-Z
t
OW
5
-
5
-
5
-
ns
C
L
1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level : 0.8 to 2.4V
Input rising and falling time : 5ns
Input and output reference voltage : 1.5V
Output load (See right) :C
L
=100pF+1TTL
C
L
=50pF+1TTL
DATA RETENTION CHARACTERISTICS
Item
Symbol
V
DR
Test Condition
Min
2.0
Typ
-
Max
5.5
Unit
V
Vcc for data retention
CS
≥
Vcc-0.2V
Data retention current
I
DR
Vcc=3.0V, CS
≥
Vcc-0.2V
KM684000BL
-
-
50
μ
A
KM684000BL-L
-
-
15
KM684000BLI
-
-
50
KM684000BLI-L
-
-
20
Data retention set-up time
t
SDR
See data retention waveform
0
-
-
ms
Recovery time
t
RDR
5
-
-
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PDF描述 |
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| KM684000LR-5 | RES 51K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA |
| KM684000LR-5L | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
| KM684000LR-7 | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
| KM684000LR-7L | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
| KM684000LR-L | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM684000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000BLG-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000BLG-5L | 制造商:Samsung Semiconductor 功能描述:Static RAM, 512Kx8, 32 Pin, Plastic, SOP |
| KM684000BLG-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000BLG-7L | 制造商:SEC 功能描述: |
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