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參數(shù)資料
| 型號： | KM68FR2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx8位超級低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 123K |
| 代理商： | KM68FR2000 |
Revision 2.0
March 1998
CMOS SRAM
KM68FV2000, KM68FS2000, KM68FR2000 Family
2
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology : Full CMOS
Organization : 256Kx8
Power Supply Voltage
KM68FV2000 Family : 3.0 ~ 3.6V
KM68FS2000 Family : 2.3 ~ 3.3V
KM68FR2000 Family : 1.8 ~ 2.7V
Low Data Retention Voltage : 1.5V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP1-0820F
GENERAL DESCRIPTION
The KM68FV2000, KM68FS2000 and KM68FR2000 families
are fabricated by SAMSUNG
′
s advanced Full CMOS process
technology. The families support various operating temperature
ranges and have various package types for user flexibility of
system design. The families also supports low data retention
voltage for battery back-up operation with low data retention
current.
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
17
Address Inputs
N.C.
No Connection
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. 2mA for super low power version with special handling.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM68FV2000
Commercial(0~70
°
C)
3.0~3.6V
70
1)
/85@V
CC
=3.3
±
0.3V
85@V
CC
=3.0
±
0.3V
10mA
2)
60mA
32-TSOP1-F
KM68FS2000
2.3~3.3V
55mA
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
70
1)
/85@V
CC
=3.3
±
0.3V
85@V
CC
=3.0
±
0.3V
30mA
KM68FR2000
1.8~2.7V
15mA
KM68FV2000I
Industrial(-40~85
°
C)
3.0~3.6V
60mA
KM68FS2000I
2.3~3.3V
55mA
120
1)
/150@V
CC
=2.5
±
0.2V
300
1)
@V
CC
=2.0
±
0.2V
30mA
KM68FR2000I
1.8~2.7V
15mA
A11
A9
A8
A13
WE
A15
VCC
A16
A14
A12
A7
A6
A5
A4
OE
I/O8
I/O7
I/O5
I/O4
I/O3
I/O2
A0
A1
A2
A3
Type I - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A17
Precharge circuit.
Memory array
1024 rows
256￥8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A11 A10 A15 A13
A16
A8
A14
A12
A7
A6
A5
A4
A3
I/O
1
Data
cont
Data
cont
I/O
8
A2
A0
A1
CS1
CS2
WE
OE
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68FS2000 | 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FV2000 | 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FU2000A | 256K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68S2000 | 256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68S4000C | 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM(512K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
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