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參數(shù)資料
| 型號(hào)： | KM68FS1000Z |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 128Kx8位超級(jí)低功耗和低電壓的CMOS SRAM的全部（128K的× 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 133K |
| 代理商： | KM68FS1000Z |
Revision 1.0
CMOS SRAM
April 1997
KM68FS1000Z, KM68FR1000Z Family
Preliminary
128Kx8 bit Super Low Power and Low Voltage Full CMOS SRAM
with 48-CSP(Chip Scale Package)
The KM68FS1000Z and KM68FR1000Z family are fabricated
by SAMSUNG
′
s advanced Full CMOS process technology. The
family can support various operating temperature ranges and
has very small size with 0.75 ball pitch and 6 x 8 ball array. The
family also support low data retention voltage for battery back-
up operation with low data retention current.
GENERAL DESCRIPTION
FEATURES SUMMARY
ü
Process Technology : 0.4
μ
m Full CMOS
ü
Organization : 128Kx8
ü
Power Supply Voltage
KM68FS1000Z Family : 2.3V(Min) ~ 3.3V(Max)
KM68FR1000Z Family : 1.8V(Min) ~ 2.7V(Max)
ü
Low Data Retention Voltage : 1.5V(Min)
ü
Three state output and TTL Compatible
ü
Package Type : 48-CSP with 0.75mm ball pitch
Name
A
0
~A
16
WE
CS
1
,CS
2
Chip Select Input
OE
Output Enable
Function
Address Inputs
Write Enable Input
Name
Vcc
Vss
I/O
1
~I/O
8
Data Inputs/Outputs
N.C.
No Connection
Function
Power
Ground
PRODUCT FAMILY
Product
Family
Operating
Temp.Range
Vcc
Range
Speed
(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
)
Operating
(I
CC2
)
KM68FS1000Z
Commercial
(0~70
°
C)
2.3~3.3V
100*@V
CC
=3.0
±
0.3V
150*@V
CC
=2.5
±
0.2V
10
μ
A
(Max)
55mA(Max)
30mA(Max)
48-CSP
(6x8 ball area
with 0.75mm
ball pitch)
KM68FR1000Z
1.8~2.7V
300*@V
CC
=2.0
±
0.2V
100*@V
CC
=3.0
±
0.3V
150*@V
CC
=2.5
±
0.2V
15mA(Max)
55mA(Max)
30mA(Max)
KM68FS1000ZI
Industrial
(-40~85
°
C)
2.3~3.3V
10
μ
A
(Max)
KM68FR1000ZI
1.8~2.7V
300*@V
CC
=2.0
±
0.2V
15mA(Max)
* See last page for package dimension.
A
0
A
1
CS
2
A
3
A
6
A
8
I/O
5
A
2
WE
A
4
A
7
I/O
1
I/O
6
NC
A
5
I/O
2
V
SS
V
CC
V
CC
V
SS
I/O
7
NC
NC
I/O
3
I/O
8
OE
CS
1
A
16
A
15
I/O
4
A
9
A
10
A
11
A
12
A
13
A
14
48-CSP PIN TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
A
Cell
Array
A
0
~A
16
I/O
1
~
8
CS
1
D
Ctrl
B
OE
WE
CS
2
D
1
2
3
4
5
6
A
B
C
D
E
F
G
H
SAMSUNG ELECTRONICS CO., LTD.
reserves the right
to change products and specifications without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68FR1000 | 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FS1000 | 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FV1000 | 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FR2000 | 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68FS2000 | 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
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