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參數(shù)資料
| 型號： | KM68FU2000A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256K x8位超低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 151K |
| 代理商： | KM68FU2000A |
Revision 0.0
July 1998
CMOS SRAM
KM68FU2000A Family
Advance
- 2 -
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
, Max)
KM68FU2000A
Industrial(-40~85
°
C)
2.7~3.3V
70/100
0.5
μ
A
3mA
48-CSP
256K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The KM68FU2000A families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 256K x8 bit
Power Supply Voltage: 2.7 ~ 3.3V
Low Data Retention Voltage: 1.0V(Min)
Three state output status and TTL Compatible
Package Type: 48-CSP with 0.75mm ball pitch
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
Chip Select Input 1
Vcc
Power
CS
2
Chip Select Input 2
Vss
Ground
OE
Output Enable Input
A
0
~A
17
Address Inputs
WE
Write Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
N.C.
No Connection
FUNCTIONAL BLOCK DIAGRAM
48-ball CSP - Top View (Ball Down)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
Precharge circuit.
Memory array
1024 rows
256x8 columns
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS1
CS2
WE
OE
Control
logic
A0
A1
CS2
A3
A6
A8
I/O5
A2
WE
A4
A7
I/O1
I/O6
NC
A5
I/O2
Vss
Vcc
Vcc
Vss
I/O7
NC
A17
I/O3
I/O8
OE
CS1
A16
A15
I/O4
A9
A10
A11
A12
A13
A14
1
2
3
4
5
6
A
B
C
D
E
F
G
H
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