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參數(shù)資料
| 型號： | KM68V257E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 32K的× 8位高速CMOS靜態(tài)RAM（3.3V的工作）（32K的× 8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 137K |
| 代理商： | KM68V257E |
KM68V257E, KM68V257EI
CMOS SRAM
PRELIMINARY
Revision 0.0
August 1998
- 5 -
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
WRITE CYCLE
NOTE : The above parameters are also guaranteed at industrial temperature range
.
Parameter
Symbol
KM68V257E-12
KM68V257E-15
KM68V257E-20
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
8
-
9
-
10
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
t
WP
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
12
-
15
-
20
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
6
0
7
0
8
ns
Data to Write Time Overlap
t
DW
6
-
7
-
8
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
0
-
0
-
0
-
ns
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PDF描述 |
|---|---|
| KM68V257EI | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V257E-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257E-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257E-20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257EI | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
| KM68V257EI-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
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