參數(shù)資料
型號: KM68V4002BI
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Kx8 Bit High Speed Static RAM(3.3V Operating)(512K x8位高速CMOS 靜態(tài) RAM)
中文描述: 512Kx8位高速靜態(tài)RAM(3.3V的工作)(為512k x8位高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 3/9頁
文件大?。?/td> 137K
代理商: KM68V4002BI
KM68V4002B/BL, KM68V4002BI/BLI
CMOS SRAM
PRELIMINARY
Rev 2.1
June 1998
- 3 -
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70
°
C, Vcc=3.3
±
0.3V, unless otherwise specified)
NOTE: The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
Com.
10ns
-
205
mA
12ns
-
200
15ns
-
195
Ind.
10ns
-
230
12ns
-
225
15ns
-
220
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
50
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
Normal
-
10
mA
L-Ver.
-
1.2
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* NOTE : Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
7
pF
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 4.6
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 4.6
V
Power Dissipation
P
D
1.0
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS
(T
A
=0 to 70
°
C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* V
IL
(Min) = -2.0V a.c(Pulse Width
8ns) for I
20mA
** V
IH
(Max) = V
CC +
2.0V a.c (Pulse Width
8ns) for I
20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3**
V
Input Low Voltage
V
IL
-0.3*
-
0.8
V
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