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參數(shù)資料
| 型號： | KM732V789 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx32-Bit Synchronous Pipelined Burst SRAM(128Kx32位同步流水線脈沖 靜態(tài) RAM) |
| 中文描述： | 128Kx32位同步流水線突發(fā)靜態(tài)存儲器（128Kx32位同步流水線脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 402K |
| 代理商： | KM732V789 |
KM732V789
128Kx32 Synchronous SRAM
- 1 -
Rev 3.0
Jun. 1998
Document Title
128Kx32-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
1.0
2.0
3.0
Remark
Final
Final
Final
History
Initial draft
change t
CYC
from 8.5ns to 10.0ns.
Modify Rev No. from 0.0 to 1.0.
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS to
V
DD
to Max.
Draft Date
May . 19. 1998
June . 02. 1998
June. 08. 1998
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