參數資料
型號: KM736FV4021
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM)
中文描述: 128K × 36至同步SRAM(128K × 36至位同步靜態(tài)內存)
文件頁數: 7/12頁
文件大?。?/td> 278K
代理商: KM736FV4021
PRELIMINARY
Rev 0.2
Jan. 1998
KM718FV4021
128Kx36 & 256Kx18 SRAM
- 7 -
KM736FV4021
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (SS Controlled, G=Low)
1
2
3
4
5
6
7
8
K
SAn
SS
SW
SWx
DQn
NOTE
1. D
3
is the input data written in memory location A
3
.
2. Q
4
is the output data read from the write data buffer(not from the cell array), as a result of address A
4
being
a match from the last
write cycle address.
A
1
A
2
A
3
A
4
A
5
A
4
A
6
A
7
Q
1
D
3
D
4
Q
5
Q
4
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (G Controlled, SS=Low)
1
2
3
4
5
6
7
8
K
SAn
G
SW
SWx
DQn
NOTE
1. D
3
is the input data written in memory location A
3
.
2. Q
4
is the output data read from the write data buffer(not from the cell array), as a result of address A
4
being
a match from the last
write cycle address.
A
1
A
2
A
3
A
4
A
5
A
4
A
6
A
7
Q
2
Q
1
D
3
D
4
Q
5
Q
4
Q
2
t
KHKH
t
AVKH
t
KHAX
t
KHKL
t
KLKH
t
KHSX
t
SVKH
t
WVKH
t
KHWX
t
WVKH
t
KHWX
t
KHQX1
t
KHQX
t
WVKH
t
KHWX
t
KHQV
t
KHDX
t
KHQZ
t
DVKH
t
KHDX
t
KHKH
t
GHQZ
t
GLQX
t
GLQV
相關PDF資料
PDF描述
KM718FV4022 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM)
KM736FV4022 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM)
KM718V089 512Kx36 & 1Mx18 Synchronous SRAM
KM718FV4021H-5 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM718FV4021H-6 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
相關代理商/技術參數
參數描述
KM736FV4021H-5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4021H-6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4021H-7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736N 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I)
KM736N-LFR 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I)