參數(shù)資料
型號: KMM364C213BK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 64 DRAM DIMM(2M x 64 動(dòng)態(tài) RAM模塊)
中文描述: 200萬× 64的DRAM內(nèi)存(2米× 64動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 5/19頁
文件大?。?/td> 345K
代理商: KMM364C213BK
DRAM MODULE
KMM364C213BK/BS
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, V
CC
=5.0V
±
10%. See notes 1,2.)
Parameter
Symbol
-5
-6
Unit
Note
Min
71
10
8
3
Max
Min
83
10
8
3
Max
RAS to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS precharge to CAS hold time
Access time from CAS precharge
Fast page mode cycle time
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width (Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
t
RWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
OEA
t
OED
t
OEZ
t
OEH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,11
11
11
11
3,11
35
40
35
75
10
50
35
15
8
40
80
10
60
40
15
8
200K
200K
11
11
11
11
11
11
18
20
18
5
13
20
5
15
20
PDE to Valid PD bit
PDE to PD bit Inactive
t
PD
t
PDOFF
10
7
10
7
ns
ns
2
2
Present Detect Read Cycle
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KMM364C213CK 2M x 64 DRAM DIMM(2M x 64 動(dòng)態(tài) RAM模塊)
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