參數(shù)資料
型號(hào)： KMM366F884BS1
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 64 DRAM DIMM(8M x 64 動(dòng)態(tài) RAM模塊)
中文描述： 8米× 64的DRAM內(nèi)存（8米× 64動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 420K
代理商： KMM366F884BS1
DRAM MODULE
KMM366F80(8)4BS1
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
8
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
*1 : V
CC
+1.3V at pulse width
≤
15ns which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Item
Symbol
Min
3.0
0
2.0
-0.3
*2
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
3.3
0
-
-
3.6
0
V
CC
+0.3
*1
0.8
V
V
V
V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM366F884BS1
Min
KMM366F804BS1
Min
-
-
-
-
-
-
-
-
-
-
-10
-10
2.4
-
Unit
Max
392
352
16
392
352
432
392
4
392
352
10
10
-
0.4
Max
512
472
16
512
472
472
432
4
512
472
10
10
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-10
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
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