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參數(shù)資料
| 型號(hào)： | KMM366S803BTL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx64 SDRAM DIMM(8Mx64 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 8Mx64 SDRAM的內(nèi)存（8Mx64動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | KMM366S803BTL |
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KMM366S803BTL
REV. 5 June '98
PC66 SDRAM MODULE
Revision History
Revision .3 (March 1998)
Some Parameter values & Characteristics of comp. level are changed as below :
- Input leakage currents (Inputs) :
±
5uA to
±
1uA.
- Input leakage currents (I/O) :
±
5uA to
±
1.5uA.
- Cin to be measured at V
DD
= 3.3V, T
A
= 23
°
C
,
f = 1MHz, V
REF
= 1.4V
±
200mV.
- AC Operating Condition is changed as defined :
V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
- I
CC3
PS is changed 1mA to 2mA.
Revision .4 (March 1998)
- I
CC2
N, I
CC2
NS, I
CC3
N & I
CC3
NS in comp. level values are changed.
Revision .5 (June 1998)
- t
SH
(-10 binning) is revised.
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