參數(shù)資料
型號(hào)： KMM366S824BT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8Mx64 SDRAM DIMM(8Mx64 動(dòng)態(tài) RAM模塊)
中文描述： 8Mx64 SDRAM的內(nèi)存（8Mx64動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 12/13頁(yè)
文件大小： 153K
代理商： KMM366S824BT
SERIAL PRESENCE DETECT
SDRAM MODULE
KMM366S824BT-G8/GH/GL
Byte #
Function Described
Function Supported
Hex value
Note
-8
-H
-L
-8
-H
-L
0
# of bytes written into serial memory at module manufacturer
128bytes
80h
1
Total # of bytes of SPD memory device
256bytes (2K-bit)
08h
2
Fundamental memory type
SDRAM
04h
3
# of row address on this assembly
12
0Ch
1
4
# of column address on this assembly
8
08h
1
5
# of module
rows
on this assembly
Data width of this assembly
2
rows
64 bits
02h
6
40h
7
...... Data width of this assembly
-
00h
8
Voltage interface standard of this assembly
LVTTL
01h
9
SDRAM cycle time @CAS latency of 3
8ns
10ns
10ns
80h
A0h
A0h
2
10
SDRAM access time from clock @CAS latency of 3
6ns
6ns
6ns
60h
60h
60h
2
11
DIMM configuraion type
Non parity
00h
12
Refresh rate & type
15.625us, support self refresh
80h
13
Primary SDRAM width
x16
10h
14
Error checking SDRAM width
None
00h
15
Minimum clock delay for back-to-back random column address
t
CCD
= 1CLK
01h
16
SDRAM device attributes : Burst lengths supported
1, 2, 4, 8 & full page
8Fh
17
SDRAM device attributes : # of
banks
on SDRAM device
SDRAM device attributes : CAS latency
4
banks
2 & 3
04h
18
06h
19
SDRAM device attributes : CS latency
0 CLK
01h
20
SDRAM device attributes : Write latency
0 CLK
01h
21
SDRAM module attributes
Non-buffered, non-registered
& redundant addressing
00h
22
SDRAM device attributes : General
+/- 10% voltage tolerance,
Burst Read Single bit Write
precharge all, auto precharge
0Eh
23
SDRAM cycle time @CAS latency of 2
12ns
10ns
12ns
C0h
A0h
C0h
2
24
SDRAM access time from clock @CAS latency of 2
6ns
6ns
7ns
60h
60h
70h
2
25
SDRAM cycle time @CAS latency of 1
-
-
-
00h
00h
00h
26
SDRAM access time from clock @CAS latency of 1
-
-
-
00h
00h
00h
27
Minimum row precharge time (=t
RP
)
20ns
20ns
20ns
14h
14h
14h
28
Minimum row active to row active delay (t
RRD
)
16ns
20ns
20ns
10h
14h
14h
29
Minimum RAS to CAS delay (=t
RCD
)
20ns
20ns
20ns
14h
14h
14h
30
Minimum activate precharge time (=t
RAS
)
48ns
50ns
50ns
30h
32h
32h
31
Module
row
density
2
rows
of 32MB
08h
32
Command and address signal input setup time
2ns
2ns
2ns
20h
20h
20h
33
Command and address signal input hold time
1ns
1ns
1ns
10h
10h
10h
34
Data signal input setup time
2ns
2ns
2ns
20h
20h
20h
ü
Organization : 8Mx64
ü
Composition : 4Mx16 *8
ü
Used component part # : KM416S4030BT-G8/GH/GL
ü
# of rows in module : 2 rows
ü
# of banks in component : 4 banks
ü
Feature : 1,375mil height & double sided component
ü
Refresh : 4K/64ms
ü
Contents ;
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM37 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM372C1600BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
KMM372C1600BS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
KMM372C1680BK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
KMM372C1680BS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
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