參數(shù)資料
型號: KMM372C213CK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 72 DRAM DIMM(2M x 72 動態(tài) RAM模塊)
中文描述: 200萬× 72的DRAM內(nèi)存(2米× 72動態(tài)內(nèi)存模塊)
文件頁數(shù): 5/19頁
文件大?。?/td> 365K
代理商: KMM372C213CK
DRAM MODULE
KMM372C213CK/CS
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
71
10
8
3
Max
Min
83
10
8
3
Max
RAS to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS precharge to CAS hold time
Access time from CAS precharge
Fast page mode cycle time
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width (Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
t
RWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
OEA
t
OED
t
OEZ
t
OEH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,11
11
11
11
3,11
35
40
35
75
10
50
35
15
8
40
80
10
60
40
15
8
200K
200K
11
11
11
11
11
11
18
20
18
5
13
20
5
15
18
20
PDE to Valid PD bit
PDE to PD bit Inactive
t
PD
t
PDOFF
10
7
10
7
ns
ns
2
2
Present Detect Read Cycle
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, V
CC
=5.0V
±
10%. See notes 1,2.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM372C213CS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
KMM372C400CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
KMM372C400CS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
KMM372C410CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
KMM372C410CS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V