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參數資料
| 型號： | KMM372F1680BS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| 中文描述： | 1,600 × 72的DRAM內存的ECC的使用16Mx4，4K的8K的刷新，3.3 |
| 文件頁數： | 3/20頁 |
| 文件大小： | 455K |
| 代理商： | KMM372F1680BS |
DRAM MODULE
KMM372F213CK/CS
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one hyper page mode cycle,
t
HPC
.
* NOTE
:
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
*
I
CC2
I
CC3
*
I
CC4
*
I
CC5
I
CC6
*
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM372F213CK/CS
Unit
Min
Max
990
900
100
990
900
810
720
30
990
900
25
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-25
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: EDO Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
CC
+1.3V/15ns, Pulse width is measured at V
CC
.
*2 : -1.3V/15ns, Pulse width is measured at V
SS
.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
Unit
V
V
V
V
V
CC
+0.3
*1
0.8
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
9
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
相關PDF資料 |
PDF描述 |
|---|---|
| KMM372F213BK | 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊) |
| KMM372F3280BK3 | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM372F3200BK3 | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM372F3280BK5 | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM372F3200BK4 | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KMM372F213CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V |
| KMM372F213CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V |
| KMM372F3200BK3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F3200BS1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
| KMM372F3200CS1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V |
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