參數(shù)資料
型號： KMM372V3200CS1
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： RES400,5.11K,1%,1/4W
中文描述： 32M × 72配置的DRAM內(nèi)存的ECC的使用16Mx4，4K的8K的刷新，3.3
文件頁數(shù)： 4/18頁
文件大小： 457K
代理商： KMM372V3200CS1
DRAM MODULE
KMM372V320(8)0CS1
CAPACITANCE
(T
A
= 25
°
C, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
Max
20
20
73
20
24
Unit
pF
pF
pF
pF
pF
Input capacitance[A0, B0, A1 - A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 - RAS3]
Input capacitance[CAS0, 1, 4, 5]
Input/Output capacitance[DQ0 - 71]
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
-
-
-
-
-
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
90
133
Max
Min
110
155
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referencde to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data in set-up time
Data in hold time
Refresh period(4K & 8K)
Write command set-up time
CAS to W delay time
Column address to W delay time
CAS prechange to W delay time
RAS ro W delay time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
AWD
t
CPWD
t
RWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
50
18
30
60
20
35
3,4,10
3,4,5,11
3,10,11
3,11
6,11
2
5
5
1
5
5
1
18
50
20
50
30
50
18
48
13
18
13
10
5
8
0
10
30
0
0
-2
10
10
20
13
-2
15
40
60
20
58
15
18
13
10
5
8
0
10
35
0
0
-2
10
10
20
15
-2
15
10K
10K
11
11
10K
32
20
10K
40
25
4,11
10,11
11
11
11
11
8
8,11
11
9,11
9,11
64
64
0
0
7
7
7
7
36
48
53
71
40
55
60
83
7,11
相關(guān)PDF資料
PDF描述
KMM372V3280CS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3280BS1 SWITCH, SPDT, CTR OFF; Thread size:1/4 x 40UNS; Switch function type:SPDT On-Off-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; RoHS Compliant: Yes
KMM372V3200CK4 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3280CK4 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3280BK3 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM372V3280BS1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3280CK4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V3280CS1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
KMM372V400CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
KMM372V400CS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
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