參數(shù)資料
型號: KMPC885ZP80
廠商: Freescale Semiconductor
文件頁數(shù): 13/87頁
文件大小: 0K
描述: IC MPU POWERQUICC 80MHZ 357PBGA
標(biāo)準(zhǔn)包裝: 2
系列: MPC8xx
處理器類型: 32-位 MPC8xx PowerQUICC
速度: 80MHz
電壓: 3.3V
安裝類型: 表面貼裝
封裝/外殼: 357-BBGA
供應(yīng)商設(shè)備封裝: 357-PBGA(25x25)
包裝: 托盤
MPC885/MPC880 PowerQUICC Hardware Specifications, Rev. 7
20
Freescale Semiconductor
Bus Signal Timing
B27a
A(0:31) and BADDR(28:30) to CS asserted
GPCM ACS = 11, TRLX = 1
(MIN = 1.50
× B1 – 2.00)
43.50
35.50
20.70
16.75
ns
B28
CLKOUT rising edge to WE(0:3) negated GPCM
write access CSNT = 0 (MAX = 0.00
× B1 + 9.00)
9.00
9.00
9.00
9.00
ns
B28a
CLKOUT falling edge to WE(0:3) negated GPCM
write access TRLX = 0, CSNT = 1, EBDF = 0
(MAX = 0.25
× B1 + 6.80)
7.60
14.30
6.30
13.00
3.80
10.50
3.13
9.93
ns
B28b
CLKOUT falling edge to CS negated GPCM write
access TRLX = 0, CSNT = 1 ACS = 10 or
ACS = 11, EBDF = 0 (MAX = 0.25
× B1 + 6.80)
14.30
13.00
10.50
9.93
ns
B28c
CLKOUT falling edge to WE(0:3) negated GPCM
write access TRLX = 0, CSNT = 1 write access
TRLX = 0, CSNT = 1, EBDF = 1
(MAX = 0.375
× B1 + 6.6)
10.90 18.00 10.90 18.00
5.20
12.30
4.69
11.29
ns
B28d
CLKOUT falling edge to CS negated GPCM write
access TRLX = 0, CSNT = 1, ACS = 10, or
ACS = 11, EBDF = 1 (MAX = 0.375
× B1 + 6.6)
18.00
18.00
12.30
11.30
ns
B29
WE(0:3) negated to D(0:31) High-Z GPCM write
access, CSNT = 0, EBDF = 0
(MIN = 0.25
× B1 – 2.00)
5.60
4.30
1.80
1.13
ns
B29a
WE(0:3) negated to D(0:31) High-Z GPCM write
access, TRLX = 0, CSNT = 1, EBDF = 0
(MIN = 0.50
× B1 – 2.00)
13.20
10.50
5.60
4.25
ns
B29b
CS negated to D(0:31) High-Z GPCM write
access, ACS = 00, TRLX = 0 & CSNT = 0
(MIN = 0.25
× B1 – 2.00)
5.60
4.30
1.80
1.13
ns
B29c
CS negated to D(0:31) High-Z GPCM write
access, TRLX = 0, CSNT = 1, ACS = 10, or
ACS = 11 EBDF = 0 (MIN = 0.50
× B1–2.00)
13.20
10.50
5.60
4.25
ns
B29d
WE(0:3) negated to D(0:31) High-Z GPCM write
access, TRLX = 1, CSNT = 1, EBDF = 0
(MIN = 1.50
× B1 – 2.00)
43.50
35.50
20.70
16.75
ns
B29e
CS negated to D(0:31) High-Z GPCM write
access, TRLX = 1, CSNT = 1, ACS = 10, or
ACS = 11 EBDF = 0 (MIN = 1.50
× B1–2.00)
43.50
35.50
20.70
16.75
ns
B29f
WE(0:3) negated to D(0:31) High-Z GPCM write
access, TRLX = 0, CSNT = 1, EBDF = 1
(MIN = 0.375
× B1 – 6.30)7
5.00
3.00
0.00
0.00
ns
B29g
CS negated to D(0:31) High-Z GPCM write
access, TRLX = 0, CSNT = 1 ACS = 10 or
ACS = 11, EBDF = 1 (MIN = 0.375
× B1–6.30)7
5.00
3.00
0.00
0.00
ns
Table 9. Bus Operation Timings (continued)
Num
Characteristic
33 MHz
40 MHz
66 MHz
80 MHz
Unit
Min
Max
Min
Max
Min
Max
Min
Max
相關(guān)PDF資料
PDF描述
KMSC7118VM1200 DSP 16BIT W/DDR CTRLR 400-MAPBGA
KS8001S TR TXRX 10/100 LINKMD 3.3V 48-SSOP
KS8001SI TXRX 10/100 LINKMD 3.3V 48-SSOP
KS8695PI IC ARM9 W/MMU 5PORT 289-PBGA
KS8695PX IC SWITCH 10/100 1PORT 289PBGA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMPG666-4 制造商:Kingstate Electronics Corporation 功能描述:
KMQ100VB102M18X35LL 功能描述:鋁質(zhì)電解電容器 - 帶引線 1000UF 100V RoHS:否 制造商:Kemet 引線類型: 電容:220 uF 容差:20 % 電壓額定值:25 V 工作溫度范圍: 端接類型:Radial 外殼直徑:8 mm 外殼長度:11 mm 引線間隔:5 mm 產(chǎn)品:General Purpose Electrolytic Capacitors 封裝:Bulk
KMQ160VS102M22X40T2 功能描述:CAP ALUM 1000UF 160V 20% SNAP RoHS:否 類別:電容器 >> 鋁 系列:KMQ 標(biāo)準(zhǔn)包裝:2,000 系列:142 RHS 電容:4700µF 額定電壓:10V 容差:±20% 壽命@溫度:105°C 時為 2000 小時 工作溫度:-40°C ~ 105°C 特點:通用 紋波電流:1.26A ESR(等效串聯(lián)電阻):- 阻抗:- 安裝類型:通孔 封裝/外殼:徑向,Can 尺寸/尺寸:0.492" 直徑(12.50mm) 高度 - 座高(最大):1.063"(27.00mm) 引線間隔:0.197"(5.00mm) 表面貼裝占地面積:- 包裝:散裝
KMQ160VS102M25X35T2 功能描述:CAP ALUM 1000UF 160V 20% SNAP RoHS:否 類別:電容器 >> 鋁 系列:KMQ 標(biāo)準(zhǔn)包裝:2,000 系列:142 RHS 電容:4700µF 額定電壓:10V 容差:±20% 壽命@溫度:105°C 時為 2000 小時 工作溫度:-40°C ~ 105°C 特點:通用 紋波電流:1.26A ESR(等效串聯(lián)電阻):- 阻抗:- 安裝類型:通孔 封裝/外殼:徑向,Can 尺寸/尺寸:0.492" 直徑(12.50mm) 高度 - 座高(最大):1.063"(27.00mm) 引線間隔:0.197"(5.00mm) 表面貼裝占地面積:- 包裝:散裝
KMQ160VS122M25X40T2 功能描述:CAP ALUM 1200UF 160V 20% SNAP RoHS:否 類別:電容器 >> 鋁 系列:KMQ 標(biāo)準(zhǔn)包裝:2,000 系列:142 RHS 電容:4700µF 額定電壓:10V 容差:±20% 壽命@溫度:105°C 時為 2000 小時 工作溫度:-40°C ~ 105°C 特點:通用 紋波電流:1.26A ESR(等效串聯(lián)電阻):- 阻抗:- 安裝類型:通孔 封裝/外殼:徑向,Can 尺寸/尺寸:0.492" 直徑(12.50mm) 高度 - 座高(最大):1.063"(27.00mm) 引線間隔:0.197"(5.00mm) 表面貼裝占地面積:- 包裝:散裝