參數資料
型號: KRX101E
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP/NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
中文描述: 外延平面進步黨/ NPN晶體管(開關,接口電路及驅動電路)
文件頁數: 1/3頁
文件大?。?/td> 86K
代理商: KRX101E
2002. 1. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KRX101E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TESV.
(Thin Extereme Super mini type with 5 pin.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2+
0.5+
0.12 0.05
5
B1
C
D
H
J
P
TESV
B1
B
D
A
A
C
C
J
H
1
2
3
5
4
P
P
+
+
+
+
+
1. Q COMMON (EMITTER)
2. Q IN (BASE)
3. Q COMMON (EMITTER)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
Q IN (BASE)
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
R1
R2
COMMON
OUT
Q
1
IN
R1
R2
COMMON
OUT
Q
2
2
IN
Q , Q
R1=10K
R2=10K
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
SYMBOL
V
O
V
I
I
O
RATING
UNIT
Output Voltage
50
V
Input Voltage
30, -10
V
Output Current
100
CHARACTERISTIC
SYMBOL
V
O
V
I
I
O
RATING
UNIT
Output Voltage
-50
V
Input Voltage
-30, 10
V
Output Current
-100
CHARACTERISTIC
SYMBOL
P
D
*
T
j
T
stg
RATING
UNIT
Power Dissipation
200
Junction Temperature
150
Storage Temperature Range
-55
150
BA
Type Name
1
2
3
4
5
Q2 MAXIMUM RATING (Ta=25
)
Q1, Q2 MAXIMUM RATING (Ta=25
)
Marking
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