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參數(shù)資料
| 型號(hào)： | KS57C3316 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | The KS57C3316 single-chip CMOS microcontroller has been designed for high performance using Samsungs newest 4-bit CPU core, SAM47 (Samsung Arrangeable |
| 中文描述： | 在KS57C3316單芯片CMOS微控制器是專門為高性能三星則采用最新的4位CPU核心，SAM47（三星Arrangeable |
| 文件頁(yè)數(shù)： | 37/58頁(yè) |
| 文件大小： | 361K |
| 代理商： | KS57C3316 |
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ELECTRICAL DATA
KS57C3316/P3316
17-10
Table 17-6. A.C. Electrical Characteristics (Concluded)
(T
A
= – 40
°
C to + 85
°
C, V
DD
= 1.8 V to 5.5 V)
Parameter
Symbol
t
CY
Conditions
Min
Typ
Max
Units
μ
s
Instruction cycle
time
(1)
V
DD
= 2.7 V to 5.5 V
0.67
–
64
V
DD
= 1.8 V to 5.5 V
1.3
–
64
With subsystem clock (fxt)
V
DD
= 2.7 V to 5.5 V
114
122
125
TCL0 input
frequency
f
TI
0
–
1.5
MHz
V
DD
= 1.8 V to 5.5 V
V
DD
= 2.7. V to 5.5 V
1
TCL0 input high,
low width
t
TIH
, t
TIL
0.48
–
–
μ
s
V
DD
= 1.8. V to 5.5 V
V
DD
= 2.7 V to 5.5 V
External
SCK
source
1.8
SCK
cycle time
t
KCY
800
–
–
ns
Internal SCK source
V
DD
= 1.8 V to 5.5 V
External
SCK
source
650
3200
Internal SCK source
V
DD
= 2.7 V to 5.5 V
External
SCK
source
3800
SCK
high, low
width
t
KH
, t
KL
400
–
–
Internal SCK source
t
KCY
/2- 50
V
DD
= 1.8 V to 5.5 V
External
SCK
source
1600
Internal
SCK
source
t
KCY
/2-150
SI setup time to
t
SIK
External
SCK
source
100
–
–
SCK
high
Internal
SCK
source
150
SI hold time to
t
KSI
External
SCK
source
400
–
–
SCK
high
Internal SCK source
V
DD
= 2.7 V to 5.5 V
External
SCK
source
400
Output delay for
SCK
to SO
t
KSO
–
–
300
Internal SCK source
V
DD
= 1.8 V to 5.5 V
External
SCK
source
250
1000
Internal
SCK
source
1000
NOTE:
Unless otherwise specified, Instruction Cycle Time condition values assume a main system clock/4 (fx/4) source.
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