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參數(shù)資料
| 型號(hào)： | KS8630 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | ENHANCED CALLING LINE IDENTIFIER WITH CALL WAITING |
| 中文描述： | 增強(qiáng)電話線呼叫等待標(biāo)識(shí)符 |
| 文件頁(yè)數(shù)： | 22/23頁(yè) |
| 文件大?。?/td> | 258K |
| 代理商： | KS8630 |
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KS8630D
ENHANCED CALLING LINE IDENTIFIER WITH CALL WAITING
22
PRELIMINARY
NOTES:
1.
2.
3.
dBV: decibels above or below a reference voltage of 1 Vrms Signal level is per tone.
dB: Twist = 20 log (f
H
amplitude / f
L
amplitude)
dBV: decibels above or below a reference voltage of 1 Vrms.
cf) dBm : decibels above or below a reference power of 1mW into 600
.
0dBm = 0.7746Vrms.
4.
These times are required by the Microcontroller.
For KS8630D to work properly, these timings must be observed.
Input level detection
FSK
LD
-40.0
-
-3.0
dBV
[Note3]
Acceptable Twist Level
FSK
AT
-
-
6
dB
Signal Timing Specification
CAS, Idle State Alerting Tone Detection
End of Tone Alert signal to MODE
low timing
T
AMODE
1.7
2.0
10
ms
MODE low to INT low timing
T
MINT
T
MODED
T
INTD1
200
250
300
us
MODE low duration timing
15
18
20
ms
INT low duration timing when Ring /
Line reversal occurs
Same timing width as Ring / Line-reversal detection at
Tip / Ring. Refer to Fig 5 / Fig 6 Timing
INT low duration timing
T
INTD2
1.5
1.7
2.0
ms
FSK detection
MARK signal start time to INT low
timing
T
MKINT
26
27
35
ms
DCLK's low duration time
T
DCLK
T
INTPD
[Note4]
60
70
80
us
1st INTB to PD low time in On-Hook
state
1
5
10
ms
Message end to PD high time
T
MSGPD
[Note4]
1
5
10
ms
PD high pulse width in Off-Hook state
T
PDW
[Note4]
30
50
100
us
ELECTRICAL CHARACTERISTICS (Continued)
(Ta = 25
°
C, V
DD
= 3.3V, unless otherwise specified)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KS8630D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:ENHANCED CALLING LINE IDENTIFIER WITH CALL WAITING |
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