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參數(shù)資料
| 型號(hào)： | KS88C9408 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8-Bit CMOS Microcontroller(8位 CMOS 微控制器) |
| 中文描述： | 8位CMOS微控制器（8位的CMOS微控制器） |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | KS88C9408 |
PRELIMINARY DATA SHEET
KS88C9408
7
ELECTRICAL DATA
Table 2. Absolute Maximum Ratings
(T
A
= 25
°
C)
Parameter
Symbol
V
DD
V
IN
V
O
T
A
T
STG
V
ESD
Conditions
—
Rating
Unit
V
Supply voltage
– 0.3 to + 7.0
Input voltage
—
– 0.3 to V
DD
+ 0.3
– 0.3 to V
DD
+ 0.3
– 25 to + 70
V
Output voltage
—
V
Operating temperature
—
°
C
°
C
V
Storage temperature
—
– 65 to + 150
Electrostatic discharge
—
5000
Table 3. D.C. Electrical Characteristics
(T
A
= –25
°
C to + 70
°
C, V
DD
= 2.7 V to 5.5 V)
Parameter
Supply voltage
Symbol
V
DD
I
DD1
Conditions
—
Min
2.7
Typ
—
Max
5.5
Unit
V
Operating current
f
CLK
= 3.57 MHz, 5V
f
CLK
= 3.57 MHz, 3V
f
CLK
= 3.57 MHz, 5V
f
CLK
= GND, 3V
SIO
—
3.5
10
mA
—
1.0
5
Idle current (with clock)
I
DD2
I
DD3
V
IH1
V
IH2
V
IH3
I
IH1
I
IH2
I
IH3
V
IL1
V
IL2
V
IL3
I
IL1
I
IL2
I
IL3
V
OH
V
OL
V
LVD
V
HVD
—
1.0
2
Stop current (without clock)
—
—
10
μA
High level input voltage
0.7 V
DD
0.8 V
DD
0.7 V
DD
– 300
—
V
DD
V
RST
CLK
High level input current
SIO
—
+ 20
μA
RST
– 20
—
+ 150
CLK
– 20
—
+ 100
Low level input voltage
SIO
0
—
0.2 V
DD
0.15 V
DD
0.12 V
DD
+ 20
V
RST
CLK
Low level input current
SIO
– 1000
—
μA
RST
– 200
—
+ 20
CLK
– 100
—
+ 20
V
DD
High level output voltage
SIO, I
OH
= – 20
μA
SIO, I
OL
= 500
μA
f
CLK
= 3.57 MHz
f
CLK
= 3.57 MHz
0.7 V
DD
0
—
V
Low level output voltage
—
0.15 V
DD
—
Low-voltage detection voltage
(note)
High-voltage detection voltage
(note)
—
2.0
V
—
7.0
—
V
NOTE:
Data for these parameters are for product verification purposes only.
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