參數(shù)資料
型號(hào)： KSE170
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Low Power Audio Amplifier Low Current, High Speed Switching Applications
中文描述： 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： TO-126, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 50K
代理商： KSE170
2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSE170
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breaksown Voltage
Parameter
Value
- 60
- 80
- 100
- 40
- 60
- 80
- 7
- 3
- 6
- 1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°
C
°
C
: KSE171
: KSE172
V
CEO
Collector-Emitter Voltage : KSE170
: KSE171
: KSE172
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSE170
: KSE171
: KSE172
I
C
= 10mA, I
B
= 0
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, T
C
= 150
°
C
V
CB
= - 80V, I
E
= 0, T
C
= 150
°
C
V
CB
= - 100V, I
E
= 0, T
C
= 150
°
C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
-40
-60
-80
V
V
V
μ
A
μ
A
μ
A
mA
mA
mA
μ
A
I
CBO
I
EBO
h
FE
Collector Cut-off Current : KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
Emitter Cut-off Current
DC Current Gain
50
30
12
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
50
MHz
pF
50
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
1. Emitter 2.Collector 3.Base
TO-126
相關(guān)PDF資料
PDF描述
KSE171 Low Power Audio Amplifier Low Current, High Speed Switching Applications
KSE172 Low Power Audio Amplifier Low Current, High Speed Switching Applications
KSE180 Low Power Audio Amplifier Low Current High Speed Switching Applications
KSE181 Low Power Audio Amplifier Low Current High Speed Switching Applications
KSE182 Low Power Audio Amplifier Low Current High Speed Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSE170S 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSE170STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSE171 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Power Audio Amplifier Low Current, High Speed Switching Applications
KSE171STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSE172 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Power Audio Amplifier Low Current, High Speed Switching Applications
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*