參數(shù)資料
型號(hào)： KSH200
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： D-PAK for Surface Mount Applications
中文描述： 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 52K
代理商： KSH200
2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
B
Base Current
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
C
= 25
°
C)
Collector Dissipation (T
a
= 25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CBO
(sus)
* Collector Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
40
25
8
1
5
10
12.5
1.4
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
Min.
25
Max.
Units
V
nA
nA
I
C
=100mA, I
B
=0
V
CB
=40V, I
E
=0
V
EBO
=8V, I
C
=0
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
I
C
=500mA, I
B
=50mA
I
C
=2A, I
B
=200mA
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=2A
V
CE
=1V, I
C
=2A
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=0.1MHz
100
100
70
45
10
180
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.3
0.75
1.8
2.5
1.6
V
V
V
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
65
MHz
pF
80
KSH200
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
相關(guān)PDF資料
PDF描述
KSH210 D-PAK for Surface Mount Applications
KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
KSH29 General Purpose Amplifier Low Speed Switching Applications
KSH29C General Purpose Amplifier Low Speed Switching Applications
KSH3055-I General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSH200_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor
KSH200TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH210 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications
KSH210TF 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSH210TM 功能描述:兩極晶體管 - BJT PNP -25V -1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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