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參數(shù)資料
| 型號： | KSH45H11 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
| 中文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | KSH45H11 |
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
- 80
- 5
- 8
- 16
20
1.75
150
- 55 ~ 150
Units
V
V
A
A
W
W
°
C
°
C
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10A, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
Min.
- 80
Typ.
Max.
Units
V
μ
A
μ
A
- 10
- 50
60
40
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
- 1
- 1.5
V
V
40
230
135
500
100
MHz
pF
ns
ns
ns
KSH45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular KSE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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| KSH45H11ITU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH45H11TF | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH45H11TM | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH47 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage and High Reliability D-PAK for Surface Mount Applications |
| KSH47TF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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