- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374394 > KSP2222A (FAIRCHILD SEMICONDUCTOR CORP) CAP 100PF 100V CERAMIC C0G 5% PDF資料下載
參數(shù)資料
| 型號： | KSP2222A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP 100PF 100V CERAMIC C0G 5% |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 24K |
| 代理商： | KSP2222A |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
* Also available as and PN2222A
Parameter
Value
75
40
6
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
=10
μ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=0.1mA, V
CE
=10V
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, *I
C
=150mA
V
CE
=10V, *I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=20V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V, I
C
=150mA
I
B1
=15mA, V
BE
(off)=0.5V
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
I
C
=100
μ
A, V
CE
=10V
R
S
=IK
, f=1KHz
Min.
75
40
6
Typ.
Max.
Units
V
V
V
μ
A
nA
0.01
10
35
50
75
100
40
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.3
1
1.2
2
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.6
f
T
Current Gain Bandwidth Product
300
MHz
C
ob
t
ON
Output Capacitance
Turn On Time
8
35
pF
ns
t
OFF
Turn Off Time
285
ns
NF
Noise Figure
4
dB
KSP2222A
General Purpose Transistor
Collector-Emitter Voltage: V
CEO
= 40V
Collector Power Dissipation: P
C
(max)=625mW
Refer KSP2222 for graphs
1. Emitter 2. Base 3. Collector
TO-92
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KSP24 | VHF Transistor |
| KSP25 | Darlington Transistor |
| KSP26 | Darlington Transistor |
| KSP27 | Darlington Transistor |
| KSP25TA | Darlington Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KSP2222A_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| KSP2222ABU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSP2222AIUTA | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSP2222ATA | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSP2222ATA_Q | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。