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參數(shù)資料
| 型號(hào)： | KSY10 |
| 廠商： | SIEMENS A G |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Hall Sensor |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 0-100mT, 0.08-0.11V, ROUND, THROUGH HOLE MOUNT |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 96K |
| 代理商： | KSY10 |
Data Sheet
2
1999-04-01
KSY 10
The Hall sensor’s active area is approx. 0.2 mm
×
0.2 mm. It is placed approx. 0.35 mm
below the plastic surface of the front side and is concentric towards the adjusting
marking on the rear. The chip carrier is non-magnetic.
The position sensor KSY 10 is particularly suitable for sensing the position of magnets
and of softmagnetic material, resp., if the sensor itself is mounted on a magnet.
Absolute Maximum Ratings
Electrical Characteristics (
T
A
= 25
°
C)
Parameter
Operating temperature
Storage temperature
Supply current
Thermal conductivity
1)
Symbol
T
A
T
stg
I
1
G
th A
Limit Values
– 40 / + 150
– 50 / + 160
7
≥
2.8
Unit
°
C
°
C
mA
mW/K
Nominal supply current
Open-circuit sensitivity
Open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.1 T
Ohmic offset voltage
2)
I
1
=
I
1N
,
B
= 0 T
Linearity of Hall voltage
B
= 0
…
0.5 T
B
= 0
…
1 T
Supply and Hall-side internal resistance
B
= 0 T
Temperature coefficient of the
open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.2 T
Temperature coefficient of the internal
resistance
B
= 0.2 T
I
1N
K
B0
V
20
5
170
…
230
85
…
130
mA
V/AT
mV
V
R0
≤ ±
25
mV
F
L
≤ ±
0.2
≤ ±
0.7
900
…
1200
%
%
R
10, 20
TC
V20
approx. –0.05
%/K
TC
R10, R20
0.1
…
0.18
%/K
1)
Thermal conductivity chip-ambient when soldered, in still air
2)
Offset voltage selection upon request
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