參數(shù)資料
型號: KSY14
廠商: SIEMENS AG
英文描述: Hall Sensor
中文描述: 霍爾傳感器
文件頁數(shù): 2/3頁
文件大小: 88K
代理商: KSY14
Semiconductor Group
2
KSY 14
Maximum ratings
Characteristics (
T
A
= 25
°
C)
Parameter
Operating temperature
Storage temperature
Supply current
Thermal conductivity
soldered, in air
Symbol
T
A
T
stg
I
1
G
thA
G
thC
Value
– 40
+ 175
– 50
+ 180
7
1.5
2.2
Unit
°
C
°
C
mA
mW/K
mW/K
Nominal supply current
Open-circuit sensitivity
Open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.1 T
Ohmic offset voltage
I
1
=
I
1N
,
B
= 0 T
Linearity of Hall voltage
B
= 0
0.5 T
B
= 0
1 T
Input resistance
Output resistance
Temperature coefficient of the
open-circuit Hall voltage
I
1
=
I
1N
,
B
= 0.1 T
Temperature coefficient of the internal
resistance
B
= 0 T
Change of offset voltage within the
temperature range
Inductive zero component
I
1N
= 0
Noise figure
I
1N
K
B0
V
20
5
190
260
95
130
mA
V/AT
mV
V
R0
≤ ±
20
mV
F
L
≤ ±
0.2
≤ ±
0.7
900
1200
900
1200
– 0.03
– 0.07
%
%
%/K
B
= 0 T
B
= 0 T
R
10
R
20
TC
V20
TC
R10, R20
0.1
0.18
%/K
V
R0
1)
2
mV
A
2
2)
0.16
cm
2
F
10
dB
1) AQL: 0.65
2) With time varying induction there exists an inductive voltage
V
ind
between the Hall voltage terminals (supply
current
I
1
= 0):
V
ind
=
A
2
×
d
B
/d
t
×
10
-4
with
V
(V),
A
2
(cm
2
),
B
(T),
t
(s)
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