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參數(shù)資料
| 型號(hào)： | KTA1552T |
| 廠商： | KEC Holdings |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. |
| 中文描述： | DC - DC變換器繼電器驅(qū)動(dòng)器，燈驅(qū)動(dòng)器，電機(jī)驅(qū)動(dòng)器，選通的應(yīng)用。 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | KTA1552T |
2001. 6. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1552T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTC3552T.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
-50
V
Collector-Emitter Voltage
-50
V
-50
Emitter-Base Voltage
-6
V
Collector Current
DC
-3
A
Pulse
-6
Base Current
-600
mA
Collector Power Dissipation
0.9
W
Junction Temperature
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10
A, I
E
=0
I
C
=-100
A, V
BE
=0
I
C
=-1mA, I
B
=0
I
E
=-10
A, I
C
=0
I
C
=-1A, I
B
=-50mA
I
C
=-2A, I
B
=-100mA
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-10V, I
C
=-500mA
V
CB
=-10V, f=1MHz
-
-
-0.1
A
A
V
V
V
V
mV
mV
Emitter Cut-off Current
Collector-Base Breakdown Voltage
-
-
-
-
-
-
-0.1
-
-
-
-
-200
-500
-50
-50
-50
-6
-
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
-100
-185
Base-Emitter Saturation Voltage
DC Current Gain
-
-0.88
-
-1.2
560
V
200
Transition Frequency
-
360
-
MHz
Collector Output Capacitance
-
24
-
pF
Swiitching
Time
Turn-On Time
t
on
-
30
-
nS
Storage Time
t
stg
-
230
-
Fall Time
t
f
-
15
-
Type Name
Marking
Lot No.
S L
I
B1
B2
I
INPUT
OUTPUT
50
100
μ
F
PW=20
μ
s
DC 1%
470
μ
F
R
V
B
R
L
R
V =5V
V =-25V
-10I =10I =I =-1A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTA1552T_04 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TSM PACKAGE |
| KTA1552T_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTA1553T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTA1571S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| KTA1572 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
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