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參數(shù)資料
| 型號： | KTC3211 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT) |
| 中文描述： | 外延平面NPN晶體管（高電流） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | KTC3211 |
1999. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3211
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTA1283.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(2) Classification O:85
160 , Y:120
200 , GR:160
300
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
EBO
6
V
Collector Current
I
C
1.5
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100
A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=1V, I
C
=5mA
45
135
-
h
FE
(2) (Note)
V
CE
=1V, I
C
=100mA
85
160
300
h
FE
(3)
V
CE
=1V, I
C
=800mA
40
110
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=800mA, I
B
=80mA
-
0.28
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=800mA, I
B
=80mA
-
0.98
1.2
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
-
0.66
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
100
190
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
9
-
pF
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