參數(shù)資料
型號： KTC3544T
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR NPN TRANSISTOR
中文描述： 外延平面NPN晶體管
文件頁數(shù)： 1/3頁
文件大小： 83K
代理商： KTC3544T
2001. 11. 7
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3544T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall Package facilitates miniaturization in end products.
High Allowable Power Dissipation.
Complementary to KTA1544T.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
DC
I
C
2
A
Pulse
I
CP
4
Base Current
I
B
400
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
Type Name
Marking
Lot No.
H N
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=3V, I
C
=0
-
-
0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10
A, I
E
=0
I
C
=1mA, I
B
=0
30
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
A, I
C
=0
I
C
=1.5A, I
B
=75mA
6
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
180
400
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1.5A, I
B
=75mA
-
0.85
1.2
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=100mA
200
-
560
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz
-
19
-
pF
Swiitching
Time
Turn-On Time
t
on
I
B1
B2
I
INPUT
OUTPUT
50
24
100
μ
F
PW=20
μ
s
DC 1%
<
470
μ
F
R
V
B
R
V =-5V
V =12V
20I =-20I =I =500mA
-
60
-
nS
Storage Time
t
stg
-
500
-
Fall Time
t
f
-
25
-
相關(guān)PDF資料
PDF描述
KTC3551T EPITAXIAL PLANAR NPN TRANSISTOR
KTC3875S GENERAL PURPOSE APPLICATION SWITCHING APPLICATION.
KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTC3876 RTD Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 09V; Power: 2W; Assembly; High Power Density; Optional Continuous Short Circuit Protected; Efficiency to 85%
KTC3878 EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTC3544T_04 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TSM PACKAGE
KTC3551T 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
KTC3552T 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION
KTC3553T 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
KTC3571S 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*