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參數(shù)資料
| 型號(hào)： | KTC812U |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關(guān)） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | KTC812U |
2002. 1. 7
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC812U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
MAXIMUM RATING (Ta=25
)
DIM
A
A1
MILLIMETERS
2.00 0.20
1.3 0.1
+
+
+
B
D
G
H
T
US6
1.25 0.1
0.65
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.15+0.1/-0.05
B1
C
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A
5
+
+
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100
, I
B
=10
-
0.1
0.3
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1
, f=1
, Rg=10
-
1.0
10
1
Q1
2
3
6
5
4
Q2
* Total Rating
Note : h
FE
Classification Y(4):120
240, GR(6):200
400
W
Type Name
h Rank
1
2
3
4
6
5
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
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