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參數(shù)資料
| 型號(hào)： | KTD1882 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（音頻功率放大器低速開關(guān)） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 69K |
| 代理商： | KTD1882 |
2000. 12. 8
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTB1772.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
1
A
Emitter-Cut-off Current
I
EBO
V
EB
=3V, I
C
=0
-
-
1
A
DC Current Gain *
h
FE
(1)
V
CE
=2V, I
C
=20mA
30
150
-
h
FE
(2) (Note)
V
CE
=2V, I
C
=1A
100
160
400
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
0.3
0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=2V, I
B
=0.2A
-
1.0
2.0
V
Current Gain Bandwidth Product
f
T
V
CE
=5V, I
C
=0.1A
-
90
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
45
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
3
A
Pulse (Note)
I
CP
7
Base Current (DC)
I
B
0.6
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Note : Pulse Width
10mS, Duty Cycle
50%.
* Pulse Test : Pulse Width
350
S, Duty Cycle
2% Pulsed
Note: h
FE
(2) Classification O:100
200 , Y:160
320 , GR:200
400
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