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參數(shù)資料
| 型號： | KTK5134S |
| 廠商： | KEC Holdings |
| 英文描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 中文描述： | N通道MOS場效應(yīng)管（超高速開關(guān)，模擬開關(guān)） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 82K |
| 代理商： | KTK5134S |
2001. 10. 29
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5134S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5
1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
G
H
J
K
L
MILLIMETERS
2.93+
1.30+0.20/-0.15
1.30 MAX
1. SOURCE
2. GATE
3. DRAIN
SOT-23
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
M
N
P
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
M
J
K
E
B
1
2
3
H
G
A
N
C
D
L
L
P
P
ELECTRICAL CHARACTERISTICS (Ta=25
)
Type Name
Marking
Lot No.
KD
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=
16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100
A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=50mA
100
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=50mA, V
GS
=2.5V
-
1.2
2
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
70
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
23
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
58
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=3V, I
D
=10mA, V
GS
=0
2.5V
-
60
-
nS
Turn-off Time
t
off
-
120
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
200
mA
Drain Power Dissipation
P
D
200
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55
150
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