參數(shù)資料
型號： KTX401E
廠商： KEC Holdings
英文描述： EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
中文描述： 平面PNP晶體管外延硅外延平面型二極管（通用，超高速開關(guān)）
文件頁數(shù)： 1/2頁
文件大?。?/td> 69K
代理商： KTX401E
2002. 1. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
B
MILLIMETERS
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2+
0.5+
0.12 0.05
5
B1
C
D
H
J
P
TESV
B1
B
D
A
A
C
C
J
H
1
2
3
5
4
P
P
+
+
+
+
+
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
MAXIMUM RATINGS (Ta=25
)
TRANSISTOR Q
1
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
C
Type Name
h Rank
1
2
3
4
5
Marking
Type
KTX401E
KTX401E
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CD
CE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
Base Current
I
B
30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
100
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
-
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
DIODE D
1
相關(guān)PDF資料
PDF描述
KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX402U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX403U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX511T EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
KTX512T EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KTX401U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
KTX402U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX403U 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
KTX411T 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
KTX411TGR 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
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