參數(shù)資料
型號: KTX401U
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
中文描述: 平面NPN晶體管外延硅外延平面型二極管(通用,超高速開關)
文件頁數(shù): 2/2頁
文件大?。?/td> 69K
代理商: KTX401U
2002. 1. 24
2/2
KTX401U
Revision No : 3
Note) h
FE
Classification Y(4):120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25
)
TRANSISTOR Q
1
DIODE D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=100
, I
B
=10
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2.0
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1
, f=1
, Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.60
-
V
V
F(2)
I
F
=10mA
-
0.72
-
V
F(3)
I
F
=100mA
-
0.90
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
Total Capacitance
C
T
V
R
=0, f=1
-
0.9
3.0
Reverse Recovery Time
t
rr
I
F
=10
-
1.6
4.0
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