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參數(shù)資料
| 型號： | KTX402U |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING) |
| 中文描述： | 外延平面NPN晶體管肖特基型二極管（通用，低電壓高速開關(guān)） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 417K |
| 代理商： | KTX402U |
2003. 3. 11
2/4
KTX402U
Revision No : 1
Note) h
FE
Classification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25
TRANSISTOR Q
1
)
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=100
, I
B
=10
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2.0
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1
, f=1
, Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.22
-
V
V
F(2)
I
F
=10mA
-
0.29
-
V
F(3)
I
F
=100mA
-
0.38
-
V
F(4)
I
F
=200mA
-
0.43
0.55
Reverse Current
I
R
V
R
=30V
-
-
50
Total Capacitance
C
T
V
R
=0, f=1
-
50
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KTX403U | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING) |
| KTX411T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE |
| KTX411TGR | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE |
| KTX411TY | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE |
| KTX-485-D3AA | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:2.5Gbps VCSEL TOSA |
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