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參數(shù)資料
| 型號： | KTX512T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| 中文描述： | 外延平面PNP晶體管肖特基型二極管 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 108K |
| 代理商： | KTX512T |
2002. 1. 24
4/5
KTX512T
Revision No : 1
C
o
COLLECTOR-BASE VOLTAGE V (V)
BASE-EMITTER VOLTAGE V (V)
T
T
COLLECTOR CURRENT I (A)
C
C
C - V
ob
CB
I - V
BE
30
1K
f - I
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
C
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
V =-2V
C
C
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
C
C
P
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm
`
0.8mm)
2
-0.02
-0.1
-0.3
-0.5
-3
-5
-1
-10
-0.05
-0.2
-1
-3
-10
-20
MOUNTED ON A CERAMIC BOARD
(600mm
`
0.8mm)
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
I MAX
(CONTIN-
UOUS)
100mS*
10mS*
1m*
μ
S
DCOPERATION
2
FORWARD VOLTAGE V (V)
F
0.1
0
100m
10m
1m
100
μ
F
1
0.5
0.4
0.3
0.2
T=2 C
I - V
F
0.6
T=5C
10
30
50
100
300
1K
500
-1
-10
-30
-3
-5
f=1MHz
D (SBD)
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