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參數(shù)資料
| 型號： | kw25n120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴(kuò)散核武器條約IGBT的技術(shù)（不擴(kuò)散技術(shù)中的快速第S - IGBT的） |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 380K |
| 代理商： | KW25N120 |
Preliminary
SKW25N120
Power Semiconductors
9
Mar-00
t
r
,
R
300A/
μ
s
500A/
μ
s
700A/
μ
s
900A/
μ
s
0ns
100ns
200ns
300ns
400ns
500ns
I
F
=25A
I
F
=12A
Q
r
,
R
300A/
μ
s
500A/
μ
s
700A/
μ
s
900A/
μ
s
0μC
1μC
2μC
3μC
4μC
5μC
I
F
=25A
I
F
=12A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C)
I
r
,
R
300A/
μ
s
500A/
μ
s
700A/
μ
s
900A/
μ
s
0A
10A
20A
30A
40A
50A
I
F
=25A
I
F
=12A
d
r
/
,
D
O
300A/
μ
s
500A/
μ
s
700A/
μ
s
900A/
μ
s
0A/
μ
s
100A/
μ
s
200A/
μ
s
300A/
μ
s
400A/
μ
s
I
F
=12A
I
F
=25A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 800V,
T
j
= 150
°
C)
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