參數(shù)資料
型號: L034
廠商: IXYS Corporation
英文描述: MegaMOSTMFET Module
中文描述: MegaMOSTMFET模塊
文件頁數(shù): 4/4頁
文件大?。?/td> 77K
代理商: L034
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
VMO 380-02 F
Fig. 7 Typical turn-on gate charge characteristics
Fig. 8 Forward Bias Safe Operating Area, I
D
= f (V
DS
)
p
Fig. 11 Drain current versus pulse width and
duty cycle
Fig. 12 Transient thermal resistance Z
thJK
= f (t
p
)
Fig. 9 Typical capacitances C = f (V
DS
), f = 1 MHz
Fig. 10 Typical forward characteristics of reverse
diode, I
S
= f (V
SD
)
0.0001
0.001
0.01
0.1
1
0
100
200
300
400
500
600
700
800
900
1000
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
1000
10
100
1000
10000
Z
thJK
D=0.01
D=0.02
D=0.05
D= 0.1
D= 0.2
D = 0.5
s
K/W
0
500
1000
1500
2000
2500
nC
3000
0
3
6
9
12
15
V
GS
V
I
D
A
Limited by R
DS(on)
t = 100 ms
t = 10 ms
V
DS
V
t
00
0.25
0.50
0.75
1.00
1.25
1.50
0
200
400
600
800
1000
I
S
1200
T
J
= 25°C
T
J
= 125°C
V
A
0
5
10
15
20
25
1
10
100
1000
nF
V
C
oss
V
DS
V
C
I
D
= 190 A
I
G
= 11 mA
V
DS
= 100 V
Q
g
t = 1 ms
non-repetitive
T
J
= 150°C
T
S
= 25°C
C
iss
C
rss
D = single pulse
t
p
s
I
d
D= 0.1
D= 0.2
D= 0.3
D= 0.4
D= 0.5
D= 0.7
T
K
= 80
°
C
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