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參數(shù)資料
| 型號： | L042 |
| 廠商： | IXYS Corporation |
| 英文描述： | Half Controlled Single Phase Rectifier Bridge |
| 中文描述： | 半控制單相整流橋 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 61K |
| 代理商： | L042 |
2000 IXYS All rights reserved
2 - 3
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
T
VJ
= 25 C
5
mA
mA
0.3
V
T
, V
F
V
T0
r
T
V
GT
I
T
, I
F
= 45 A; T
VJ
= 25 C
For power-loss calculations only (T
VJ
= 125 C)
1.45
V
0.85
13
V
m
V
D
= 6 V;
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 125 C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 125 C
1.0
1.2
65
80
50
V
V
I
GT
V
D
= 6 V;
mA
mA
mA
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
I
G
= 0.3 A; t
= 30 s;
di
G
/dt = 0.3 A/ s;
0.2
V
5
mA
150
200
100
mA
mA
mA
I
H
t
gd
T
VJ
= 25 C; V
D
= 6 V; R
GK
=
T
VJ
= 25 C; V
D
= 1/2 V
I
G
= 0.3 A; di
G
/dt = 0.3 A/ s
T
= 125 C, I
= 15 A, t
= 300 s, V
= 100 V
di/dt = -10 A/ s, dv/dt = 20 V/ s, V
D
= 2/3 V
DRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
100
mA
2
s
t
q
Q
r
R
thJC
typ.
150
75
s
C
1.15
0.29
1.55
0.39
K/W
K/W
K/W
K/W
R
thJK
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.6
6.3
50
mm
mm
m/s
2
VHF 36
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1
10
100
1000
I
G
0.1
1
10
V
G
mA
1: I
GT
, T
VJ
= 125
°
C
2: I
GT
, T
VJ
= 25
°
C
3: I
GT
, T
VJ
= -40
°
C
V
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125
°
C
4
2
1
5
6
10
100
1000
1
10
100
1000
μ
s
t
gd
T
VJ
= 25
°
C
typ.
Limit
mA
I
G
3
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