參數(shù)資料
型號: l104
廠商: IXYS Corporation
英文描述: Phase Control Thyristors
中文描述: 相位控制晶閘管
文件頁數(shù): 2/3頁
文件大?。?/td> 51K
代理商: L104
2000 IXYS All rights reserved
2 - 3
CS 8
0.0
0.5
1.0
1.5
V
T
2.0
0
10
20
30
40
50
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
0
25
50
75
0
1
2
3
4
I
T
t
gd
V
G
V
I
G
t
A
m
s
mA
A
V
Symbol
Test Conditions
Characteristic Values
I
R
, I
D
V
T
V
T0
r
T
V
GT
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 33 A; T
VJ
= 25 C
For power-loss calculations only (T
VJ
= 125 C)
3
mA
1.6
V
1.0
18
V
m
V
D
= 6 V;
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 25 C
T
VJ
= -40 C
V
D
= 2/3 V
DRM
2.5
3.5
30
50
V
V
I
GT
V
D
= 6 V;
mA
mA
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
0.2
V
1
mA
T
VJ
= 25 C; t
P
= 10 s
I
G
= 0.09 A; di
G
/dt = 0.09 A/ s
T
VJ
= 25 C; V
D
= 6 V; R
GK
=
T
VJ
= 25 C; V
D
= 1/2 V
I
G
= 0.09 A; di
G
/dt = 0.09 A/ s
T
VJ
= T
; I
= 16 A, t
= 300 s; di/dt = -20 A/ s
V
R
= 100 V; dv/dt = 20 V/ s; V
D
= 2/3 V
DRM
DC current
DC current
100
mA
I
H
t
gd
80
mA
2
s
t
q
typ.
60
s
R
thJC
R
thJH
d
S
d
A
a
1.5
2.5
K/W
K/W
Creepage distance on surface
Strike distance through air
Max. acceleration, 50 Hz
1.55
1.55
50
mm
mm
m/s
2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time t
gd
Fig. 3 On-state characteristics
B
B
C
B
lim.
typ.
typ. lim.
T
VJ
= 125°C
T
VJ
= 25°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
=125°C
A
I
G
:
V
=
I
G
:
V
=
I
G
:
V
=
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