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參數(shù)資料
| 型號： | L2SA1576AQT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | L2SA1576AQT1 |
L2SA1576A*T1–2/4
LESHAN RADIO COMPANY, LTD.
L2SA1576A*T1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
T
A
= 100°C
25°C
– 40°C
–50
–20
–10
–50
–2
–1
–0.5
–0.2
–0.1
0
–0.4
–0.8
–1.2
–1.6
–2.0
T
A
= 25°C
–10
–8
–6
–4
–2
0
I
C
,
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= –10 V
V
BE
,BASE TO EMITTER VOLTAGE(V)
I
C
,
V
CE
,COLLECTOR TO EMITTER VOLTAGE (V)
–35.0
–31.5
–28.0
–24.5
–21.0
–17.5
–14.0
–10.5
–7.0
–3.5
μ
A
I
B
=0
0
–1
–2
–3
–4
–5
T
A
= 25°C
–100
–80
–60
–40
–20
0
I
C
,
V
CE
,COLLECTOR TO EMITTER VOLTAGE (V)
–250
–200
–150
500
450
400
350
300
–100
–50
μ
A
I
B
=0
T
A
= 25°C
500
200
100
50
h
F
,
V
CE
= –5 V
–3V
–1V
I
C
, COLLECTOR CURRENT (mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 100°C
500
200
100
50
h
F
,
V
CE
= – 6V
I
C
, COLLECTOR CURRENT (mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
25°C
–40°C
–1
–0.5
–0.2
–0.1
–0.05
V
C
,
I
C
, COLLECTOR CURRENT (mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 25°C
I
C
/I
B
= 50
20
10
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相關(guān)代理商/技術(shù)參數(shù) |
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| L2SA1576ART1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L2SA1576AST1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L2SA1576AST1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L2SA1576AT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
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